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 SEMiX 252GB126HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R)2s Trench IGBT Modules
SEMiX 252GB126HDs Freewheeling Diode Preliminary Data Module Inverse Diode
Features
Typical Applications
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Remarks
GB
1
18-04-2007 SCH
(c) by SEMIKRON
SEMiX 252GB126HDs
Characteristics Symbol Conditions Inverse Diode min. typ. max. Units
SEMiX(R)2s Trench IGBT Modules
Freewheeling Diode SEMiX 252GB126HDs
Preliminary Data
Features
Module
Typical Applications
Remarks
Temperature sensor
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
GB
2
18-04-2007 SCH
(c) by SEMIKRON
SEMiX 252GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
18-04-2007 SCH
(c) by SEMIKRON
SEMiX 252GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
18-04-2007 SCH
(c) by SEMIKRON
SEMiX 252GB126HDs
5
18-04-2007 SCH
(c) by SEMIKRON


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